2SD1745 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1745 Datasheet PDF : 5 Pages
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Power Transistors
2SD1745
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1175
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory liniarity of forward current transfer ratio hFE
• Large collector current IC
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
130
V
Collector-emitter voltage (Base open) VCEO
80
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
4
A
Peak collector current
ICP
8
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 ∼ +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 1 A
IC = 3 A, IB = 0.15 A
IC = 3 A, IB = 0.15 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
80
V
10
µA
50
µA
45
90
260
0.5
V
1.5
V
30
MHz
0.5
µs
2.5
µs
0.15
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
90 to 180 130 to 260
Publication date: September 2003
SJD00217BED
1
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