2SD1274B 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1274B

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1274 2SD1274A 2SD1274B

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A, L=25mH

80

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA, IC=0

6

V

VCEsat Collector-emitter saturation voltage IC=5A; IB=1A

1.6

V

VBE

Base-emitter voltage

IC=5A ; VCE=4V

1.5

V

ICBO

Collector

cut-off current

2SD1274 VCB=150V; IE=0

2SD1274A VCB=200V; IE=0

1

mA

2SD1274B VCB=250V; IE=0

IEBO

Emitter cut-off current

固IN电C半H导AN体GE SEMICONDUCTOR hFE

DC current gain

fT

Transition frequency

tf

Fall time

VEB=5V; IC=0

IC=5A ; VCE=4V

IC=0.5A ; VCE=10V

IC=5A ;IB1=0.8A VEB=-5V

50

μA

14

40

MHz

1.0

μs

2

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