2SD1412 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1412 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1412
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.4A
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
hFE-2
DC Current Gain
IC= 4A; VCE= 1V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V, ftest= 1MHz
IC= 1A; VCE= 4V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.3A;
RL= 10Ω; VCC= 30V
hFE classifications
O
Y
70-140 120-240
MIN TYP. MAX UNIT
50
V
0.4
V
1.2
V
30 μA
50 μA
70
240
30
250
pF
10
MHz
0.2
μs
2.5
μs
0.5
μs
isc Website：www.iscsemi.cn
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