2SD1419 데이터 시트보기 (PDF) - KEXIN Industrial

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2SD1419

NPN Silicon epitaxial Transistor

KEXIN Industrial 

SMD Type

2SD1419

Electrical Characteristics Ta = 25

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Gain bandwidth product

Collector output capacitance

*Pulse test

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE

VCE(sat)

VBE

fT

Cob

Testconditons

IC = 10 ìA, IE = 0

IC = 1 mA, RBE =

IE= 10 ìA, IC = 0

VCB = 100 V, IE = 0

VCE = 5 V, IC = 150 mA*

VCE = 5 V, IC = 500 mA*

IC = 500 mA, IB = 50 mA*

VCE = 5 V, IC = 150 mA*

VCE = 5 V, IC = 150 mA*

VCB = 10 V, IE = 0, f = 1 MHz

hFE Classification

Marking

hFE

DD

60 120

DE

100 200

Transistors

Min Typ Max Unit

120

V

100

V

5

V

10 ìA

60

200

30

1

V

1.5 V

140

MHz

12

pF

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