2SD1450 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1450 Datasheet PDF : 3 Pages
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Transistors
2SD1450
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
25
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
12
V
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
4.0±0.2
2.0±0.2
Unit: mm
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
0.45+–00..1200
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
25
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
12
Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0
Forward current transfer ratio *1
hFE1 *2 VCE = 2 V, IC = 0.5 A
200
hFE2 VCE = 2 V, IC = 1 A
60
Collector-emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 20 mA
Base-emitter saturation voltage *1
VBE(sat) IC = 500 mA, IB = 20 mA
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
ON resistance *3
Ron
100
800
0.13 0.40
1.2
200
10
0.6
V
V
V
nA
V
V
MHz
pF
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
T
No rank
hFE1
200 to 350 300 to 500 400 to 800 200 to 800
*3: Ron Measurement circuit
1 kΩ
IB = 1 mA
VB VV VA
f = 1 kHz
V = 0.3 V
Ron =
VB
VA − VB
× 1 000 (Ω)
Publication date: April 2003
SJC00222BED
1
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