2SD1221-Y(Q) 데이터 시트보기 (PDF) - Toshiba
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2SD1221-Y(Q) Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
2SD1221
2SD1221
Audio Frequency Power Amplifier Application
Unit: mm
• Low collector saturation voltage
: VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
• High power dissipation: PC = 20 W (Tc = 25°C)
• Complementary to 2SB906
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
3
A
Base current
IB
0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-05-19
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