2SC5850LCTL 데이터 시트보기 (PDF) - Renesas Electronics
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2SC5850LCTL Datasheet PDF : 6 Pages
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2SC5850
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
50
V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO
40
V IC = 1 mA, RBE = ∞
Emitter to base breakdown voltage
V(BR)EBO
5
V IE = 10 µA, IC = 0
Collector cutoff current
ICBO
0.5
µA VCB = 30 V, IE = 0
Emitter cutoff current
DC current transfer ratio
IEBO
hFE*1
0.5
µA VEB = 2 V, IC = 0
100
500
VCE = 12 V, IC = 2 mA
Collector to emitter saturation voltage
VCE(sat)
0.2
V IC = 10 mA, IB = 1 mA
Base to emitter voltage
VBE
0.75
V VCE = 12 V, IC = 2 mA
Notes: 1. The 2SC5850 is grouped by hFE as follows.
Grade
B
C
D
Mark
LB
LC
LD
hFE
100 to 200
160 to 320
250 to 500
Rev.1.00 Aug 10, 2005 page 2 of 5
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