2SC5154 데이터 시트보기 (PDF) - Toshiba
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2SC5154 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5154
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC5154
Unit: mm
• High transition frequency: fT = 100 MHz (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
Unit
160
V
160
V
5
V
1.5
A
3.0
0.15
A
1.3
W
150
°C
−50 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CEO
VCB = 160 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
hFE
VCE = 5 V, IC = 100 mA
(Note)
VCE (sat)
VBE
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
fT
VCE = 10 V, IC = 100 mA
Cob
VCB = 10 V, IC = 0, f = 1 MHz
Note: hFE classification O: 70 to 140, Y: 120 to 240
Marking
Min Typ. Max Unit
―
―
1.0
µA
―
―
1.0
µA
160 ―
―
V
70
― 240
―
―
1.0
V
― 0.75 0.95
V
― 100 ― MHz
―
25
―
pF
C5154
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07
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