Power Transistors
140
(1)
120
100
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink.
(3) Without heat sink
(PC=3.0W)
80
60
40
20 (2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Area of safe operation (ASO)
100
ICP
10
IC
100ms 10ms
t=100µs
1ms
DC
1
0.1
0.01
Non repetitive pulse
0.001 TC=25˚C
1 3 10 30
100 300 1000
Collector to emitter voltage VCE (V)
tstg — IB
10
TC=25˚C
9 IC=6A
fH=64kHz
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
End-of-scan current IB end (A)
hFE — IC
102
VCE=5V
TC=100˚C
25˚C
–25˚C
10
2SC5270, 2SC5270A
5000
4000
VCE(sat) — IC
IC/IB=4
3000
2000
1000
TC=100˚C –25˚C
25˚C
1
1
10
102
103
104
105
Collector current IC (mA)
0
102
103
104
105
Collector current IC (mA)
Area of safe operation, horizontal operation ASO
50
f=64kHz, TC<90˚C
Area of safe operation with
respect to the single pulse
40
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
30
20
10
<1mA
0
0
500
1000 1500 2000
Collector to emitter voltage VCE (V)
tf — IB
1.0
TC=25˚C
0.6
IC=6A
fH=64kHz
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
End-of-scan current IB end (A)
2