C5027E-R 데이터 시트보기 (PDF) - Unisonic Technologies

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C5027E-R

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC5027E

NPN SILICON TRANSISTOR

ABSOLUATE MAXIUM RATINGS (Tc = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

750

V

Collector-Emitter Voltage

VCEO

700

V

Collector-Emitter Voltage

VEBO

7

V

Peak Collector Current

IC

3

A

Collector Current (Pulse)

ICP

10

A

Base Current

IB

1.5

A

Power Dissipation

Junction Temperature

Storage Temperature

PD

50

W

TJ

150

℃

TSTG

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Turn ON Time

Storage Time

Fall Time

SYMBOL

BVCBO

BVCEO

BVEBO

VCEO(SUS)

ICBO

IEBO

hFE1

hFE 2

VCE (SAT)

VBE (SAT)

Cob

fT

tON

tS

tF

TEST CONDITIONS

IC=1mA, IE=0

IC=5mA, IB=0

IE=1mA, IC=0

IC=1.5A, IB1= -IB2=0.3A

L=2mH, Clamped

VCB=750V, IE=0

VEB=5V, IC=0

VCE=5V, IC=0.2A

VCE=5V, IC=1A

IC=1.5A, IB=0.3A

IC=1.5A, IB=0.3A

VCB=10V, f=1MHz, IE=0

VCE=10V, IC=0.2A

VCC=400V

IC=5IB1= -2.5IB2=2A

RL=200Ω

CLASSIFICATION of hFE1

CLASSIFICATION

RANGE

N

10 ~ 20

R

15 ~ 30

MIN TYP MAX UNIT

750

V

700

V

7

V

700

V

10 μA

10 μA

10

40

8

2

V

1.5 V

60

pF

15

MHz

0.5 μs

3 μs

0.3 μs

O

20 ~ 40

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R203-030,B

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