2SC4793L-A-TF3-T 데이터 시트보기 (PDF) - Unisonic Technologies
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2SC4793L-A-TF3-T Datasheet PDF : 4 Pages
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2SC4793
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
230
V
Collector-Emitter Voltage
VCEO
230
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
IB
0.1
A
Ta=25℃
2.0
W
TC=25℃
PC
20
W
TJ
+150
℃
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless others specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Base -Emitter Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
CLASSIFICATION OF hFE
RANK
RANGE
SYMBOL TEST CONDITIONS
BVCEO IC=10mA, IB=0
VBE VCE=5V, IC=500mA
VCE(SAT) IC=500mA, IB=50mA
ICBO VCB =230V, IE=0
IEBO VEB=5V, IC=0
hFE VCE=5V, IC=100mA
fT VCE=10V, IC=100mA
Cob VCB=10V, IE=0, f=1MHz
MIN
230
100
TYP
100
20
MAX
1.0
1.5
1.0
1.0
320
UNIT
V
V
V
µA
µA
MHz
pF
A
100-200
B
180-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R219-009,B
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