2SC3519 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SC3519

Silicon NPN Power Transistors

SavantIC Semiconductor  

TPS72501

TPS72515, TPS72516

TPS72518, TPS72525

SLVS341D – MAY 2002 – REVISED MARCH 2004

www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

over recommended operating free-air temperature range VI = VO(typ) + 1 V, IO= 1 mA, EN = IN, Co = 1 µF, Ci = 1 µF (unless

otherwise noted)

PARAMETER

VDO

Dropout voltage

TPS72525 (4)

TPS72518 (4)

Minimum input voltage for valid

RESET

Trip threshold voltage

RESET

Hysteresis voltage

t(RESET) delay time

Rising edge deglitch

Output low voltage (at 700 µA)

Leakage current

IO = 1 A

IO = 1 A

IO = 1 A

IO = 1 A

TEST CONDITIONS

TJ = 25°C

TJ = 25°C

MIN TYP

170

210

1.3

90

93

10

25

50

10

-0.3

MAX UNIT

280

mV

320

V

96 %VO

mV

75 ms

µs

0.4 V

100 nA

(4) Dropout voltage is defined as the differential voltage between VO and VI when VO drops 100 mV below the value measured with

VI = VO + 1 V.

4

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