2SC2626 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2626 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2626
DESCRIPTION
·With TO-3PN package
·High voltage,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
400
300
7
15
5
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
1.55
UNIT
℃/W
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