2SC2488 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2488 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2488
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SA1064
APPLICATIONS
·Designed for AF amplifier, high power amplifier applications.
www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc Website：www.iscsemi.cn
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