SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1418
CHARACTERISTICS
Tj=25 unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.1A
ICBO
Collector cut-off current
VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
fT
Transition frequency
IC=1A ; VCE=4V
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
50
V
50
V
5
V
1.0
V
1.5
V
100 µA
100 µA
35
320
5
MHz
2