2SB766A 데이터 시트보기 (PDF) - Unisonic Technologies

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2SB766A

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SB766A

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS ( TA=25°C )

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-1

A

Peak Collector Current

ICP

-1.5

A

Collector Power Dissipation (Note 2)

PC

1

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Printed circuit board :Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector

portion

„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut-Off Current

DC Current Transfer Ratio

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Output Capacitance

Note: Pulse measurement

SYMBOL

VCBO

VCEO

VEBO

ICBO

hFE1

hFE2

VCE(SAT)

VBE(SAT)

fT

COB

TEST CONDITIONS

IC= -10μA ,IE=0

IC= -2mA ,IB= 0

IE= -10μA, IC=0

VCB= -20V,IE=0

VCE= -10V,IC= -500mA (Note)

VCE= -5V,IC= -1A (Note)

IC = -500mA,IB =-50mA (Note)

IC = -500mA,IB =-50mA (Note)

VCB= -10V, IE= 50mA, f=200MHz

VCB= -10V, IE= 0, f=1MHz

„ CLASSIFICATION OF hFE1

RANK

RANGE

Q

85-170

R

120-240

MIN TYP MAX UNIT

-60

V

-50

V

-5

V

-0.1 μA

85

340

50

-0.2 -0.4 V

-0.85 -1.2 V

200

MHz

20 30 pF

S

170-340

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R208-028,B

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