2SB708O 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SB708O

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB707 2SB708

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SB707

2SB708

IC=-10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A

VBEsat

Base-emitter saturation voltage

IC=-5A;IB=-0.5 A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

VCB=-60V; IE=0

VEB=-5V; IC=0

IC=-3A ; VCE=-1V

IC=-5A ; VCE=-1V

MIN TYP. MAX UNIT

-60

V

-80

-0.5

V

-1.5

V

-10

µA

-10

µA

40

200

20

hFE-2 classifications

R

O

Y

40-80 60-120 100-200

2

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