2SB1556 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1556

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1556

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

-140

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB=B -7mA

VBE(on) Base-Emitter On Voltage

IC= -7A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -140V ; IE=0

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-2.5

V

-3.0

V

-5

μA

-5

μA

hFE-1

DC Current Gain

IC= -7A ; VCE= -5V

5000

30000

hFE-2

DC Current Gain

IC= -12A ; VCE= -5V

2000

COB

Output Capacitance

IE=0 ; VCB= -10V;ftest= 1.0MHz

170

fT

Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V

30

pF

MHz

‹ hFE-1 Classifications

A

B

C

5000-12000 9000-18000 15000-30000

isc Website：www.iscsemi.cn

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