SMD Type
Transistors
PNP Transistors
2SB1219
■ Typical Characterisitics
PC Ta
240
200
160
120
80
40
0
0
40
80
120 160
Ambient temperature T a (°C)
−800
−700
−600
−500
−400
−300
−200
IC VCE
T a = 25°C
IB = −10 mA −9 mA
−8 mA
−7 mA
–6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
−100
0
0
−4 −8 −12 −16 −20
Collector to emitter voltage V CE (V)
−800
−700
IC IB
V CE = −10 V
T a = 25°C
−600
−500
−400
−300
−200
−100
0
0
−2 −4 −6 −8 −10
Base current I B (mA)
−100
−30
−10
V CE(sat)
IC
IC / IB = 10
−3
−1
− 0.3
− 0.1
T a = 75°C
25°C
−25°C
− 0.03
− 0.01
− 0.01− 0.03 − 0.1 − 0.3 −1 −3 −10
Collector current I C (A)
−100
−30
−10
VBE(sat)
IC
IC / IB = 10
−3
25°C
−1
− 0.3
− 0.1
T a = −25°C
75°C
− 0.03
− 0.01
− 0.01− 0.03 − 0.1 − 0.3 −1 −3 −10
Collector current I C (A)
hFE IC
600
V CE = −10 V
500
400
300
T a = 75°C
200 25°C
−25°C
100
0
− 0.01− 0.03 − 0.1 − 0.3 −1 −3 −10
Collector current CI (A)
fT IE
240
V CB = −10 V
T a = 25°C
200
160
120
80
40
0
1 2 3 5 10 20 30 50 100
Emitter current I E (mA)
Cob VCB
24
IE = 0
f = 1 MHz
20
T a = 25°C
16
12
8
4
0
−1 −2 −3 −5 −10 −20−30 −50 −100
Collector to base voltage V CB (V)
−120
−100
VCER RBE
IC = −2 mA
Ta = 25°C
−80
−60
−40
2SB1219
−20
0
1 3 10 30 100 300 1 000
Base to emitter resistance R BE (kΩ)
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