B1069 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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B1069

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB1069 2SB1069A

DESCRIPTION

·With TO-220 package

·High speed switching

·Low collector saturation voltage

APPLICATIONS

·For low-voltage switching applications

PINNING

PIN

1

2

3

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VCBO

Collector-base voltage

2SB1069

2SB1069A

Open emitter

VCEO

Collector-emitter voltage

2SB1069

2SB1069A

Open base

VEBO

Emitter-base voltage

Open collector

IC

Collector current

ICM

Collector current-peak

PC

Collector power dissipation

Ta=25℃

TC=25℃

Tj

Junction temperature

Tstg

Storage temperature

VALUE

-40

-50

-20

-40

-5

-4

-8

1.4

25

150

-55~150

UNIT

V

V

V

A

A

W

℃

℃

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