2SA2007E 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SA2007E Datasheet PDF : 1 Pages
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Transistors
2SA2007
High-speed Switching Transistor (−60V,−12A)
2SA2007
!Features
1) High switching speed.
(Typ. tf = 0.15µs at Ic = −6A)
2) Low saturation voltage.
(Typ. VCE(sat) = −0.2V at IC / IB = −6A / −0.3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5526.
!External dimensions (Units : mm)
10.0
φ 3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collectorpowerdissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−100
−60
−5
−12
−20
2
25
150
−55 ∼ +150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25°C)
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA2007
TO-220FN
F
−
500
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
−100
−60
−5
−
−
−
−
−
−
160
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
80
250
−
−
−
Max.
−
−
−
−10
−10
−0.3
−0.5
−1.2
−1.5
320
−
−
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
−
MHz
pF
µs
µs
µs
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −100V
VEB = −5V
IC/IB = −6A/−0.3A
IC/IB = −8A/−0.4A
IC/IB = −6A/−0.3A
IC/IB = −8A/−0.4A
VCE = −2V , IC = −2A
VCE = −10V , IE = 1A , f = 30MHz
VCB = −10V , IE = 0A , f = 1MHz
IC = −6A , RL = 5Ω
IB1 = −IB2 = −0.3A
VCC −30V
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