2SA1893(2004) 데이터 시트보기 (PDF) - Toshiba
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2SA1893 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1893
Strobe Flash Applications
Audio Power Amplifier Applications
2SA1893
Unit: mm
• hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
• hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
• Low saturation voltage: VCE (sat) = −1.0 V (max)
(IC = −4 V, IB = −0.1 A)
• High-power dissipation: PC = 1.3 W
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
−35
V
−20
V
−8
V
−5
A
−8
−0.5
A
1.3
W
150
°C
−55 to 150
°C
Note 1: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −35 V, IE = 0
IEBO
VEB = −8 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (1)
VCE = −2 V, IC = −0.5 A
(Note 2)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = −2 V, IC = −4 A
IC = −4 A, IB = −0.1 A
VCE = −2 V, IC = −4 A
VCE = −2 V, IC = −0.5 A
VCB = −10 V, IE = 0, f = 1 MHz
Note 2: hFE (1) classification O: 100 to 200, Y: 160 to 320
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
−20 ―
―
V
100 ― 320
70
―
―
―
― −1.0
V
―
― −1.5
V
― 170 ― MHz
―
62
―
pF
1
2004-07-07
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