2SA1758 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA1758

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50μA ,IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-6A; IB=-0.3A

VCEsat-2 Collector-emitter saturation voltage IC=-8A; IB=-0.4A

VBEsat-1 Base-emitter saturation voltage

IC=-6A; IB=-0.3A

VBEsat-2 Base-emitter saturation voltage

IC=-8A; IB=-0.4A

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-2A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-10V

‹ hFE Classifications

D

E

F

60-120 100-200 160-320

Product Specification

2SA1758

MIN TYP. MAX UNIT

-60

V

-5

V

-0.3

V

-0.5

V

-1.2

V

-1.5

V

-10

μA

-10

μA

60

320

90

MHz

2

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