SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA , IC=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-2A; IB=-0.2A
VCB=-30V;IE=0
VEB=-5V; IC=0
IC=-0.5A ; VCE=-3V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
Product Specification
2SA1305
MIN TYP. MAX UNIT
-30
V
-5
V
-1.0
V
-1.5
V
-1.0
µA
-1.0
µA
60
320
100
MHz
2