2N7002ZW 데이터 시트보기 (PDF) - Unisonic Technologies

부품명

상세내역

제조사

2N7002ZW

300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Unisonic Technologies 

2N7002ZW

Preliminary

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

Pulse(Note 2)

ID

300

mA

800

Power Dissipation

Derating above TA=25°C

PD

200

mW

1.6

mW/°C

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=10µA

60

Drain-Source Leakage Current

IDSS

VDS=60V, VGS=0V

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note)

DYNAMIC PARAMETERS

VGS(TH) VDS=10V, ID=1mA

1.0 1.85

RDS(ON)

VGS=10V, ID=0.5A, TJ=125°C

VGS=5V, ID=0.05A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

CISS

25

COSS VDS=25V, VGS=0V, f=1.0MHz

10

CRSS

3.0

Turn-ON Delay Time

tD(ON) ID=0.2 A, VDD=30V, VGS=10V,

12

Turn-OFF Delay Time

tD(OFF) RL=150Ω, RG=10Ω

20

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, Is=115mA (Note )

0.88

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Maximum Continuous Drain-Source Diode

Forward Current

Is

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse width≦300μs, Duty cycle≦1%

MAX UNIT

V

1.0 µA

±10 µA

2.5 V

13.5 Ω

7.5

50 pF

25 pF

5.0 pF

20 ns

30 ns

1.5 V

0.8 A

115 mA

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R502-539.a

Share Link: