2N6688 데이터 시트보기 (PDF) - Inchange Semiconductor
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2N6688 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6688
DESCRIPTION
·With TO-3 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·Designed for high-power switching
circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
300
200
8
20
50
200
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
VALUE
0.875
UNIT
℃/W
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