Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N4921 2N4922 2N4923
DESCRIPTION
·With TO-126 package
·Complement to type 2N4918/4919/4920
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For driver circuits ,switching ,and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
2N4921
VCBO
Collector-base voltage 2N4922
2N4923
2N4921
VCEO
Collector-emitter voltage 2N4922
2N4923
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
·
VALUE
40
60
80
40
60
80
5
1
3
1
30
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
VALUE
4.16
UNIT
℃/W