2N4915 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N4915

Silicon NPN Power T ransistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2N4915

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A

VBE(on) Base-Emitter On Voltage

IC= 2.5A; VCE= 2V

ICEO

Collector Cutoff Current

VCE= 80V; IB= 0

ICBO

Collector Cutoff Current

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB= 80V; IE= 0

VCE= 80V; VBE(off)= -1.5V

VCE= 80V; VBE(off)= -1.5V, TC=150℃

VEB=-5V; IC= 0

hFE-1

DC Current Gain

IC= 2.5A; VCE= 2V

hFE-2

DC Current Gain

IC= 5A; VCE= 2V

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 10V; ftest= 1.0MHz

MIN MAX UNIT

80

V

1.0

V

1.5

V

1.4

V

1.0

mA

0.1

mA

0.1

2.0

mA

1.0

mA

25

100

7

4

MHz

isc Website：www.iscsemi.cn

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