1SS377(2001) 데이터 시트보기 (PDF) - Toshiba
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1SS377 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS377
High Speed Switching
1SS377
Unit in mm
Low forward voltage
Small package
: VF = 0.23V (typ.) @IF = 5mA
: SC-59
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
15
10
200 *
100 *
1*
150
125
−55∼125
−40∼100
*:
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
V
V
mA
mA
A
mW
°C
°C
°C
JEDEC
EIAJ
TO-236MOD
SC-59
TOSHIBA
Weight: 0.012g
1-3G1F
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 5mA
― IF = 100mA
― VR = 10V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.18 ―
―
0.23 0.30
V
― 0.35 0.50
―
―
20
µA
―
20
40
pF
Equivalent Circuit (Top View)
Marking
1
2001-06-13
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