1N70 데이터 시트보기 (PDF) - Unisonic Technologies

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1N70

1.2 Amps, 700 Volts N-CHANNEL MOSFET

Unisonic Technologies 

1N70

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 1)

IAR

1.2

A

Continuous Drain Current

ID

1.2

A

Pulsed Drain Current (Note 1)

IDM

4.8

A

Avalanche Energy

Single Pulsed (Note 2)

EAS

Repetitive (Note 1)

EAR

50

mJ

4.0

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

Power Dissipation

Junction Temperature

Operating Temperature

Storage Temperature

PD

3

W

TJ

+150

℃

TOPR

-55 ~ +150

℃

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

PARAMETER

Junction-to-Ambient

Junction-to-Case

SYMBOL

θJA

θJc

RATINGS

79

29

UNIT

℃/W

℃/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-171,A

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