ICL3232E2D/2R 데이터 시트보기 (PDF) - Intersil
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ICL3232E2D/2R Datasheet PDF : 10 Pages
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5962-0620701, 5962-0620702, 5962-0620703, 5962-0620704
Die Characteristics
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 13.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 10.0kÅ ± 1kÅ
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
GND
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
ICL3221E: 286
ICL3232E: 296
ICL3243E: 464
ICL3238E: 1235
Process:
Si Gate CMOS
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FN6297 Rev 1.00
November 3, 2011
Page 8 of 10
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