A1122 데이터 시트보기 (PDF) - Renesas Electronics

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A1122

Silicon PNP Epitaxial

Renesas Electronics 

2SA1122

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

–55

Collector to emitter breakdown voltage V(BR)CEO –55

Emitter to base breakdown voltage

V(BR)EBO

–5

Collector cutoff current

ICBO

—

Emitter cutoff current

DC current transfer ratio

IEBO

—

hFE*1

160

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Note: 1. The 2SA1122 is grouped by hFE as follows.

Grade

C

D

Mark

CC

CD

hFE

160 to 320 250 to 500

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = –10 µA, IE = 0

—

—

V IC = –1 mA, RBE = ∞

—

—

V IE = –10 µA, IC = 0

—

–0.5

µA VCB = –30 V, IE = 0

—

–0.5

µA VEB = –2 V, IC = 0

—

500

VCE = –12 V, IC = –2 mA

— –0.5

V IC = –10 mA, IB = –1 mA

— –0.75

V VCE = –12 V, IC = –2 mA

Rev.2.00 Aug 10, 2005 page 2 of 4

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