C3808 데이터 시트보기 (PDF) - SANYO -> Panasonic

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C3808

NPN Epitaxial Planar Silicon Transistor

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

2SC3808

Symbol

Conditions

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

tf

IC=1A, IB=20mA

IC=1A, IB=20mA

IC=10µA, IE=0

IC=1mA, RBE=∞

IE=10µA, IC=0

See specified test circuit.

See specified test circuit.

See specified test circuit.

Switching Time Test Circuit

Ratings

Unit

min

typ

max

0.2

0.5 V

0.87

1.2 V

80

V

60

V

15

V

0.23

µs

2.7

µs

0.75

µs

No.2015–2/4

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