NXP Semiconductors
N-channel silicon field-effect transistors
Product specification
BF245A; BF245B; BF245C
handbook1, 0h3alfpage
gis
(μA/V)
102
10
MGE778
102
handbook1, 0h4alfpage
bis
brs
gis
(mA/V)
(μA/V)
Crs
10
103
bis
brs
1
102
MGE780
10
Crs
(pF)
1
10−1
1
10−1
10
102
f (MHz)
103
VDS = 15 V; VGS = 0; Tamb = 25 C.
Fig.12 Input admittance; typical values.
10
10
10−2
102
f (MHz)
103
VDS = 15 V; VGS = 0; Tamb = 25 C.
Fig.13 Common source reverse admittance as a
function of frequency; typical values.
hangdbfso,ok1, h0alfpage
−bfs
(mA/V)
8
6
4
2
0
10
MGE782
gfs
−bfs
102
f (MHz)
103
handbook1, 0h3alfpage
gos
(μA/V)
102
10
1
10
MGE783
10
bos
(mA/V)
bos
1
gos
10−1
102
f (MHz)
10−2
103
VDS = 15 V; VGS = 0; Tamb = 25 C.
Fig.14 Common-source forward transfer admittance
as a function of frequency; typical values.
VDS = 15 V; VGS = 0; Tamb = 25 C.
Fig.15 Common-source output admittance as a
function of frequency; typical values.
1996 Jul 30
7