NXP Semiconductors
BAS21W series
High-voltage switching diodes
600
IF
(mA)
400
006aab212
102
IFSM
(A)
10
mbg703
200
(2)
1
(1)
(3)
(4)
0
0
0.4
0.8
1.2
1.6
VF (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
10−1
1
10
102
103
104
tp (µs)
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
102
IR
(1)
(µA)
10
(2)
1
006aab213
10−1
(3)
10−2
10−3
10−4
(4)
10−5
0
50
100
150
200
250
VR (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 3. Reverse current as a function of reverse voltage; typical values
BAS21W_SER_1
Product data sheet
Rev. 01 — 9 October 2009
© NXP B.V. 2009. All rights reserved.
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