SI3850ADV(2006) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SI3850ADV
(Rev.:2006)

Complementary MOSFET Half-Bridge (N- and P-Channel)

Vishay Semiconductors 

Si3850ADV

Vishay Siliconix

Complementary MOSFET Half-Bridge (N- and P-Channel)

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

N-Channel

20

0.300 at VGS = 4.5 V

0.410 at VGS = 3.0 V

P-Channel

- 20

0.640 at VGS = - 4.5 V

0.980 at VGS = - 3.0 V

ID (A)

1.4

1.2

- 0.96

- 0.78

TSOP-6

Top View

G1

1

6

S1

D

2

5

D

G2

3

4

S2

Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free)

FEATURES

• 100 % Rg Tested

S2

G2

D

G1

S1

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)a

Maximum Power Dissipation

(Surface Mounted on FR4 Board)

Operating Junction and Storage Temperature Range

TA = 25 °C

TA = 70 °C

TA = 25 °C

TA = 70 °C

VDS

VGS

ID

IDM

IS

PD

TJ, Tstg

20

- 20

± 12

1.4

- 0.96

1.1

- 0.77

3.5

- 2.0

0.9

- 0.9

1.08

0.70

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient (Sourface Mounted on FR4 Board,

± ≤ 10 sec)

Symbol

RthJA

N- or P-Channel

115

Notes:

Maximum under Steady State condition is 150 °C/W.

Unit

V

A

W

°C

Unit

°C/W

Document Number: 73789

S-60470-Rev. A, 27-Mar-06

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