256MB / 512MB (x64)
168-PIN SDRAM DIMMs
Table 22: Serial Presence-Detect Matrix (Continued)
VDD = +3.3V ±0.3V; “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
BYTE
31
32
33
34
35
36-61
62
63
64
65-71
72
73-90
91
92
93
94
95-98
99-125
126
127
DESCRIPTION
MODULE BANK DENSITY
COMMAND AND ADDRESS SETUP TIME, tAS, tCMS
COMMAND AND ADDRESS HOLD TIME, tAH, tCMH
DATA SIGNAL INPUT SETUP TIME, tDS
DATA SIGNAL INPUT HOLD TIME, tDH
RESERVED
SPD REVISION
CHECKSUM FOR BYTES 0-62
MANUFACTURER’S JEDEC ID CODE
MANUFACTURER’S JEDEC ID CODE(CONT.)
MANUFACTURING LOCATION
MODULE PART NUMBER (ASCII)
PCB IDENTIFICATION CODE
IDENTIFICATION CODE (CONT.)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
MODULE SERIAL NUMBER
MANUFACTURER-SPECIFIC DATA (RSVD)
SYSTEM FREQUENCY
SDRAM COMPONENT & CLOCK DETAIL
ENTRY
(VERSION)
MT8LSDT3264A(I) MT16LSDT6464A(I)
256MB
1.5ns (-13E/-133)
2ns (-10E)
0.8ns (-13E/-133)
1ns (-10E)
1.5ns (-13E/-133)
2ns (-10E)
0.8ns (-13E/-133)
1ns (-10E)
REV. 1.2
(-13E)
(-133)
(-10E)
MICRON
0
40
15
20
08
10
15
20
08
10
00
12
8B
D1
19
2C
FF
01 - 06
Variable Data
01-04
00
Variable Data
Variable Data
Variable Data
40
15
20
08
10
15
20
08
10
00
12
8C
D2
1A
2C
FF
01 - 06
Variable Data
01-04
00
Variable Data
Variable Data
Variable Data
100 MHz (-13E/
64
64
-133/-10E)
AF
FF
NOTE:
1. The value of tRAS used for -13E modules is calculated from tRC - tRP. Actual device spec. value is 37ns.
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.