LCMXO2280C-5T144C 데이터 시트보기 (PDF) - Lattice Semiconductor

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LCMXO2280C-5T144C

MachXO Family Data Sheet

Lattice Semiconductor 

Lattice Semiconductor

DC and Switching Characteristics

MachXO Family Data Sheet

MachXO1200 and MachXO2280 Hot Socketing Specifications1, 2, 3, 4

Symbol

Parameter

Condition

Min.

Typ.

Max.

Non-LVDS General Purpose sysIOs

IDK

Input or I/O Leakage Current

LVDS General Purpose sysIOs

0 ≤ VIN ≤ VIH (MAX.)

—

— +/-1000

IDK_LVDS

Input or I/O Leakage Current

VIN ≤ VCCIO

VIN > VCCIO

—

— +/-1000

—

35

—

1. Insensitive to sequence of VCC, VCCAUX, and VCCIO. However, assumes monotonic rise/fall rates for VCC, VCCAUX, and VCCIO.

2. 0 ≤ VCC ≤ VCC (MAX), 0 ≤ VCCIO ≤ VCCIO (MAX), and 0 ≤ VCCAUX ≤ VCCAUX (MAX).

3. IDK is additive to IPU, IPW or IBH.

4. LVCMOS and LVTTL only.

Units

µA

µA

mA

DC Electrical Characteristics

Over Recommended Operating Conditions

Symbol

Parameter

Condition

Min.

Typ.

Max. Units

IIL, IIH1, 4, 5 Input or I/O Leakage

0 ≤ VIN ≤ (VCCIO - 0.2V)

(VCCIO - 0.2V) < VIN ≤ 3.6V

—

—

10

µA

—

—

40

µA

IPU

I/O Active Pull-up Current

0 ≤ VIN ≤ 0.7 VCCIO

-30

—

-150

µA

IPD

I/O Active Pull-down Current

VIL (MAX) ≤ VIN ≤ VIH (MAX)

30

—

150

µA

IBHLS

Bus Hold Low sustaining current VIN = VIL (MAX)

30

—

—

µA

IBHHS

Bus Hold High sustaining current VIN = 0.7VCCIO

-30

—

—

µA

IBHLO

Bus Hold Low Overdrive current 0 ≤ VIN ≤ VIH (MAX)

—

—

150

µA

IBHHO

Bus Hold High Overdrive current 0 ≤ VIN ≤ VIH (MAX)

—

—

-150

µA

VBHT3

Bus Hold trip Points

0 ≤ VIN ≤ VIH (MAX)

VIL (MAX) — VIH (MIN) V

C1

I/O Capacitance2

VCCIO = 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,

VCC = Typ., VIO = 0 to VIH (MAX)

—

8

—

pf

C2

Dedicated Input Capacitance2

VCCIO = 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,

VCC = Typ., VIO = 0 to VIH (MAX)

—

8

—

pf

1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured

with the output driver active. Bus maintenance circuits are disabled.

2. TA 25°C, f = 1.0MHz

3. Please refer to VIL and VIH in the sysIO Single-Ended DC Electrical Characteristics table of this document.

4. Not applicable to SLEEPN pin.

5. When VIH is higher than VCCIO, a transient current typically of 30ns in duration or less with a peak current of 6mA can occur on the high-to-

low transition. For MachXO1200 and MachXO2280 true LVDS output pins, VIH must be less than or equal to VCCIO.

3-2

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