2SC4050 데이터 시트보기 (PDF) - Renesas Electronics

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2SC4050

Silicon NPN Epitaxial

Renesas Electronics 

2SC4050

Preliminary

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

120

—

—

V IC = 10 A, IE = 0

Collector to emitter breakdown voltage V(BR)CEO 120

—

—

V IC = 1 mA, RBE = 

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 10 A, IC = 0

Collector cutoff current

ICBO

—

—

0.1

A VCB = 70 V, IE = 0

Emitter cutoff current

IEBO

—

—

0.1

A VEB = 2 V, IC = 0

DC current transfer ratio

hFE

400

—

800

VCE = 12 V, IC = 2 mA*1

Collector to emitter saturation voltage

VCE(sat)

—

—

0.1

V IC = 10 mA, IB = 1 mA*1

Base to emitter saturation voltage

VBE(sat)

—

—

1.1

V IC = 10 mA, IB = 1 mA*1

Notes: 1. Pulse test

R07DS0274EJ0300 Rev.3.00

Mar 28, 2011

Page 2 of 5

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