SS24S-E3/5AT 데이터 시트보기 (PDF) - Vishay Semiconductors
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SS24S-E3/5AT Datasheet PDF : 4 Pages
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SS22S, SS23S, SS24S
Vishay General Semiconductor
50
8.3 ms Single Half Sine-Wave
at Rated TL
40
30
20
10
0
0
10
100
Number of Cycles at 60 Hz
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 25 °C
100 000
10 000
1000
TJ = 150 °C
TJ = 125 °C
100
10
TJ = 25 °C
1
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 28-Apr-14
3
Document Number: 89008
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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