D45C11(2010) 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

D45C11
(Rev.:2010)

PNP Current Driver Transistor

Fairchild Semiconductor 

D45C11

PNP Current Driver Transistor

January 2010

Features

• This device is designed for power amplifier, regulator and switching

circuits where speed is important.

• Sourced from Process 5P.

• NZT751 for characteristics.

1

TO-220

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCEO

IC

TJ, TSTG

Collector-Emitter Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

-80

V

-4.0

A

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics TA=25°C unless otherwise noted

Symbol

Parameter

PD

Total Device Dissipation

Derate above 25°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max.

60

480

2.1

62.5

Units

W

mW/°C

°C/W

°C/W

© 2009 Fairchild Semiconductor Corporation

D45C11 Rev. B2

1

www.fairchildsemi.com

Share Link: