MURD620CTPBF 데이터 시트보기 (PDF) - Vishay Semiconductors
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MURD620CTPBF Datasheet PDF : 8 Pages
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VS-MURD620CTPbF
Vishay Semiconductors
Ultrafast Rectifier,
2 x 3 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
-
IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A
trr
TJ = 25 °C
-
-
-
19
TJ = 125 °C
-
26
Peak recovery current
TJ = 25 °C
IF = 3 A
-
3.1
IRRM
dIF/dt = 200 A/μs
TJ = 125 °C
VR = 160 V
-
4.6
Reverse recovery charge
TJ = 25 °C
Qrr
TJ = 125 °C
-
30
-
60
MAX.
35
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Thermal resistance,
junction to case per leg
RthJC
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
RthJA
RthCS
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style D-PAK
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
-
9.0
-
80
-
-
0.3
-
0.01
-
-
12
(10)
MURD620CT
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94084
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 13-Jan-11
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