MT47H128M8SH-25EITH 데이터 시트보기 (PDF) - Micron Technology

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MT47H128M8SH-25EITH

1Gb: x4, x8, x16 DDR2 SDRAM

Micron Technology 

FBGA Package Capacitance

1Gb: x4, x8, x16 DDR2 SDRAM

Packaging

Table 4: Input Capacitance

Parameter

Symbol Min Max Units Notes

Input capacitance: CK, CK#

CCK 1.0 2.0 pF

1

Delta input capacitance: CK, CK#

CDCK – 0.25 pF 2, 3

Input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT

CI

1.0 2.0 pF 1, 4

Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, CDI

ODT

– 0.25 pF 2, 3

Input/output capacitance: DQ, DQS, DM, NF

Delta input/output capacitance: DQ, DQS, DM, NF

CIO 2.5 4.0 pF 1, 5

CDIO

– 0.5 pF 2, 3

Notes:

1. This parameter is sampled. VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V, VREF = VSS, f = 100 MHz,

TC = 25°C, VOUT(DC) = VDDQ/2, VOUT (peak-to-peak) = 0.1V. DM input is grouped with I/O

balls, reflecting the fact that they are matched in loading.

2. The capacitance per ball group will not differ by more than this maximum amount for

any given device.

3. ΔC are not pass/fail parameters; they are targets.

4. Reduce MAX limit by 0.25pF for -25, -25E, and -187E speed devices.

5. Reduce MAX limit by 0.5pF for -3, -3E, -25, -25E, and -187E speed devices.

PDF: 09005aef8565148a

1GbDDR2.pdf – Rev. AA 07/14 EN

22

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