MAX17000A
Complete DDR2 and DDR3 Memory
Power-Management Solution
ELECTRICAL CHARACTERISTICS
(VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = -40°C to +85°C, unless otherwise noted.)
(Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX UNITS
PWM CONTROLLER
Input Voltage Range
Output-Voltage Accuracy
On-Time Accuracy (Note 2)
Minimum Off-Time
VIN
VCC, VDD
VCSL
tON
tOFF(MIN)
VIN = 4.5V to 26V,
SKIP = VCC
VIN = 12V,
VCSL = 1.2V
(Note 2)
FB = AGND
FB = VCC
FB = Adj
RTON = 96.75k
(600kHz), 167ns
nominal
RTON = 200k
(300kHz), 333ns
nominal
RTON = 303.25k
(200kHz), 500ns
nominal
3
4.5
1.485
1.782
0.990
-15
-10
-15
26
V
5.5
1.520
1.820
V
1.020
+15
+10
%
+15
350
ns
Quiescent Supply Current (VCC)
FB forced above 1.0V (PWM, VTT, and
VTTR blocks); STDBY = VCC
ICC
FB forced above 1.0V (PWM and VTTR
blocks); STDBY = AGND
4
mA
1500
μA
LINEAR REGULATOR (VTT)
VTTI Input Voltage Range
VVTTI
1.0
VTTI Supply Current
IVTTI VTTI = 2.8V, REFIN = 1.4V, no load
REFIN Range
VREFIN
0.5
2.8
V
50
μA
1.5
V
REFIN Disable Threshold
VCC -
0.3
V
VTT Internal MOSFET
VTT Load Regulation
High-side on-resistance (source, IVTT = 0.1A)
Low-side on-resistance (sink, IVTT = 0.1A)
-50μA to -1A IVTT +50μA to +1A
0.25
0.36
17
mV/A
6
Maxim Integrated