IXFV18N90P 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFV18N90P Datasheet PDF : 5 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247, PLUS220)
IXFH18N90P
IXFT18N90P
Characteristic Values
Min. Typ.
Max.
6
10
S
1.2
Ω
5230
pF
366
pF
53
pF
40
ns
33
ns
60
ns
44
ns
97
nC
30
nC
40
nC
0.25
0.23 °C/W
°C/W
IXFV18N90P
IXFV18N90PS
Source-Drain Diode
TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IF = 9A, -di/dt = 100A/μs
IRM
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
18 A
72 A
1.5 V
1.0
10.8
300 ns
μC
A
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
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