KM44L16230T-G0 데이터 시트보기 (PDF) - Samsung

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KM44L16230T-G0

DDR SDRAM Specification Version 0.61

Samsung 

128Mb DDR SDRAM

Target

6. When terminating a burst Read command, the BST command must be issued LBST (“BST Latency”) clock

cycles before the clock edge at which the output buffers are tristated, where LBST equals the CAS latency

for read operations. This is shown in previous page Figure with examples for CAS latency (CL) of 1.5, 2,

2.5, 3 and 3.5 (only selected CAS latencies are required by the DDR SDRAM standards, the others are

optional).

7. When the burst terminates, the DQ and DQS pins are tristated.

The BST command is not byte controllable and applies to all bits in the DQ data word and the(all) DQS pin(s).

3.3.10 DM masking

The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read

cycle. When the data mask is activated (DM high) during write operation, DDR SDRAM does not accept the

corresponding data.(DM to data-mask latency is zero).

DM must be issued at the rising or falling edge of data strobe.

< Burst Length=8 >

0

1

2

3

4

5

6

7

8

CK

CK

Command

DQS

WRITE

NOP

tDQSS

NOP

NOP

NOP

NOP

NOP

NOP

NOP

DQ ′s

DM

Din 0 Din 1 Din 2 Din 3 Din 4 Din 5 Din 6 Din7

masked by DM=H

Figure 18. DM masking timing

- 28 of 63 -

REV. 0.61 August 9. '99

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