CY7C1399B-20VI 데이터 시트보기 (PDF) - Cypress Semiconductor
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CY7C1399B-20VI Datasheet PDF : 10 Pages
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CY7C1399B
Switching Characteristics Over the Operating Range[6] (Continued)
Parameter
Read Cycle
tRC
tAA
tOHA
tACE
tDOE
tLZOE
tHZOE
tLZCE
tHZCE
tPU
tPD
Write Cycle[9, 10]
tWC
tSCE
tAW
tHA
tSA
tPWE
tSD
tHD
tHZWE
tLZWE
Description
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z[7]
OE HIGH to High Z[7, 8]
CE LOW to Low Z[7]
CE HIGH to High Z[7, 8]
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z[9]
WE HIGH to Low Z[7]
1399B-15
Min.
Max.
15
15
3
15
6
0
6
3
7
0
15
15
10
10
0
0
10
8
0
7
3
1399B-20
Min.
Max.
20
20
3
20
7
0
6
3
7
0
20
20
12
12
0
0
12
10
0
7
3
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data Retention Characteristics (Over the Operating Range - L version only)
Parameter
Description
Conditions
VDR
ICCDR
tCDR
tR
VCC for Data Retention
Data Retention Current
Com’l
Chip Deselect to Data
Retention Time
Operation Recovery Time
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
Min.
2.0
0
0
tRC
Max.
20
Unit
V
µA
ns
ns
Document #: 38-05071 Rev. *C
Page 5 of 10
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