BSP615S2L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
BSP615S2L
7 Ptot = 1.8W
A
6 ji h g
5.5
5
4.5
4
3.5
3
2.5
VGS [V]
a
2.6
b
2.8
c
3.0
d
3.2
fe
3.4
f
3.6
g
3.8
h
4.0
ei
4.5
j
10.0
2
d
1.5
1
c
0.5
b
a
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
5.6
A
4.8
4.4
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0 0.5 1 1.5 2 2.5 3 V 4
VGS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
BSP615S2L
300
mΩ
e
f
240
220
200
180
160
140
120
100
80
60
40 VGS [V] =
ef ghi j
20 3.4 3.6 3.8 4.0 4.5 10.0
0
0
1
2
3
g
h
i
j
4 A 5.5
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
8
S
6
5
4
3
2
1
0
0
1
2
3
4
A
6
ID
Page 5
2003-10-29