BSP315P(1999) 데이터 시트보기 (PDF) - Infineon Technologies

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BSP315P
(Rev.:1999)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSP 315 P

Avalanche Energy EAS = f (Tj)

parameter: ID = -1.17 A , VDD = -25 V

RGS = 25 Ω

25

Typ. gate charge

VGS = f (QGate)

parameter: ID = -1.17 A pulsed

BSP 315 P

-16

V

mJ

-12

15

-10

-8

10

-6

0,2 VDS max

0,8 VDS max

-4

5

-2

0

25 45 65 85 105 125 °C 165

Tj

Drain-source breakdown voltage

V(BR)DSS = f (Tj)

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0

QGate

BSP 315 P

-72

V

-68

-66

-64

-62

-60

-58

-56

-54

-60 -20

20

60 100 °C

180

Tj

Page 8

1999-09-14

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