BSC090N03LS 데이터 시트보기 (PDF) - Infineon Technologies

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BSC090N03LS

OptiMOS™3 Power-MOSFET

Infineon Technologies 

Parameter

Symbol Conditions

BSC090N03LS G

min.

Values

typ.

Unit

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C iss

-

C oss

V GS=0 V, V DS=15 V,

f =1 MHz

-

Crss

-

t d(on)

-

tr

V DD=15 V, V GS=10 V,

-

t d(off)

I D=30 A, R G=1.6 Ω

-

tf

-

Gate Charge Characteristics5)

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Gate charge total

Gate plateau voltage

Gate charge total

Gate charge total, sync. FET

Output charge

Q gs

-

Q g(th)

-

Q gd

V DD=15 V, I D=30 A,

-

Q sw

V GS=0 to 4.5 V

-

Qg

-

V plateau

-

Qg

V DD=15 V, I D=30 A,

V GS=0 to 10 V

-

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

-

Q oss

V DD=15 V, V GS=0 V

-

Reverse Diode

Diode continuous forward current I S

-

T C=25 °C

Diode pulse current

I S,pulse

-

Diode forward voltage

V SD

V GS=0 V, I F=30 A,

T j=25 °C

-

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

-

4) See figure 13 for more detailed information

5) See figure 16 for gate charge parameter definition

Rev. 1.6

page 3

1100

460

22

3.1

2.6

14

2.4

1500 pF

610

-

- ns

-

-

-

3.7

4.9 nC

1.7

2.3

1.6

2.7

3.6

5.3

6.7

8.9

3.4

-V

14

18

6

7.7 nC

12

16

-

29 A

-

192

0.89

1.1 V

-

10 nC

2009-11-03

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